(China (Mainland))
Product Summary
The FZ1200R16KF4 is an IGBT module.
Parametrics
FZ1200R16KF4 absolute maximum ratings: (1)collector-emitter voltage:1600V; (2)DC-collector current:1200A; (3)repetitive peak collector current:2400A; (4)total power dissipation:7800W; (5)gate-emitter peak voltage:±20V; (6)DC forward current:1200A; (7)repetitive peak forw. current:2400A; (8)insulation test voltage:3.4kV.
Features
FZ1200R16KF4 features: (1)Product Category: IGBT Modules; (2)RoHS: No; (3)Product: IGBT Silicon Modules; (4)Configuration: Dual; (5)Collector- Emitter Voltage VCEO Max: 1600 V; (6)Collector-Emitter Saturation Voltage: 3.5 V; (7)Continuous Collector Current at 25℃: 1200 A; (8)Gate-Emitter Leakage Current: 400 nA; (9)Power Dissipation: 7.8 KW; (10)Maximum Operating Temperature: + 125℃; (11)Package / Case: IHM130; (12)Maximum Gate Emitter Voltage: ±20 V; (13)Minimum Operating Temperature: - 40℃; (14)Mounting Style: SMD/SMT; (15)Factory Pack Quantity: 8.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FZ1200R16KF4 |
Infineon Technologies |
IGBT Modules 1600V 1200A SINGLE |
Data Sheet |
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FZ1200R16KF4S1 |
Infineon Technologies |
IGBT Modules 1600V 1200A SINGLE |
Data Sheet |
Negotiable |
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