(China (Mainland))
Product Summary
The FS450R12KE3 is a EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode.
Parametrics
FS450R12KE3 absolute maximum ratings: (1)Kollektor Emitter Sperrspannung collector emitter voltage, Vces: 1200V; (2)Kollektor Dauergleichstrom DC collector current, Ic @ Tc=80℃: 450A; Ic @ Tc=25℃: 600A; (3)Periodischer Kollektor Spitzenstrom repetitive peak collector current: 900A; (4)Gesamt Verlustleistung total power dissipation: 2100W; (5)Gate Emitter Spitzenspannung gate emitter peak voltage: ±20V.
Features
FS450R12KE3 features: (1)collector emitter saturation voltage, Tvj=25℃, VCE: 1.70 to 2.15V; Tvj=125℃, VCE: 2.00V; (2)gate threshold voltage, VGE: 5.0 to 6.5V; (3)gate charge, QG: 4.30μC; (4)internal gate resistor, RG: 1.7Ω; (5)input capacitance, Cies: 32 nF; (6)reverse transfer capacitance, Cres: 1.50nF; (7)collector-emitter cut-off current, Ices: 5.0mA; (8)gate-emitter leakage current, IGES: 400nA; (9)turn-on delay time(inductive load); (10)SC data, ISC: 1800A; (11)thermal resistance, junction to case: 0.06 K/W; (12)thermal resistance, case to heatsink: 0.048 K/W.
Diagrams
| Image | Part No | Mfg | Description |  |
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 FS450R12KE3 |
Infineon Technologies |
IGBT Modules 1200V 450A 3-PHASE |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||
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FS450R12KE3 |
Infineon Technologies |
IGBT Modules 1200V 450A 3-PHASE |
Data Sheet |
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FS450R12KE4 |
Infineon Technologies |
Discrete Semiconductor Modules 1200V 450A IGBT4 |
Data Sheet |
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FS450R17KE3 |
Infineon Technologies |
IGBT Modules 1700V 450A 3-PHASE |
Data Sheet |
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FS450R17KE4 |
Infineon Technologies |
IGBT Modules IGBT 1700V 450A |
Data Sheet |
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