Product Summary
The DDB6U215N16L is a Netz-Dioden-Modul Rectifier Diode Module.
Parametrics
DDB6U215N16L absolute maximum ratings: (1)repetitive peak reverse voltage: 1600, 1800 V; (2)non-repetitive peak reverse voltage: 1700, 1900 V; (3)IFRMSM: 125 A; (4)output current: 93 A; (5)surge forward current Tvj = Tvj max, tp = 10ms: 1950 A; (6)I2t-value Tvj = Tvj max, tp = 10ms: 19000 A2s.
Features
DDB6U215N16L features: (1)forward voltage: 1.61V; (2)threshold voltage: 0,75 V; (3)forward slope resistance: 1,6 mW; (4)reverse current: 10 mA; (5)insulation test voltage RMS, f = 50Hz, t = 1sec: 3,6 kV.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
DDB6U215N16L |
Infineon Technologies |
Discrete Semiconductor Modules 1600V 215A UN-CNTL |
Data Sheet |
|
|
|||||||||
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||
DDB6U100N12R |
Infineon Technologies |
Discrete Semiconductor Modules 1200V 100A UN-CNTL |
Data Sheet |
|
|
|||||||||
DDB6U100N12RR |
Infineon Technologies |
Discrete Semiconductor Modules 1200V 100A UN-CNTL |
Data Sheet |
|
|
|||||||||
DDB6U100N16R |
Infineon Technologies |
Discrete Semiconductor Modules 1600V 100A UN-CNTL |
Data Sheet |
|
|
|||||||||
DDB6U100N16RR |
Infineon Technologies |
Discrete Semiconductor Modules 1600V 100A UN-CNTL |
Data Sheet |
|
|
|||||||||
DDB6U104N16RR |
Infineon Technologies |
Discrete Semiconductor Modules 1600V 105A UN-CNTL |
Data Sheet |
|
|
|||||||||
DDB6U104N18RR |
Infineon Technologies |
Rectifiers 1.8KV 25A |
Data Sheet |
|
|