(China (Mainland))
Product Summary
The MUBW50-12E8 is the converter-Brake inverter module which is widely used in electric braking operation and so on.
Parametrics
MUBW50-12E8 absolute maximum ratings: (1)VCES, TVJ = 25 to 150℃: 1200 V; (2)VGES, Continuous: ± 20 V; (3)IC25, TC = 25℃: 90 A; (4)IC80, TC = 80℃: 62 A; (5)ICM, VGE = ±15 V; RG = 22 Ω; TVJ = 125℃: 100 A; (6)VCEK, RBSOA; Clamped inductive load;L = 100 μH: VCES; (7)t SC(SCSOA), VCE= 900 V; VGE = ±15 V; RG = 22 Ω; TVJ = 125℃: 10 μs; (8)Ptot, TC = 25℃: 350 W.
Features
MUBW50-12E8 features: (1)High level of integration - only one power semiconductor module; (2)required for the whole drive; (3)IGBT technology with low saturation voltage, low switching losses and tail current, high RBSOA and short circuit ruggedness; (4)Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery; (5)Industry standard package with insulated copper base plate and; (6)soldering pins for PCB mounting; (7)Temperature sense included.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MUBW50-12E8 |
Ixys |
Discrete Semiconductor Modules IGBT (NPT3) 1200V 50A |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||
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MUBW100-06A8 |
Ixys |
Discrete Semiconductor Modules 100 Amps 600V |
Data Sheet |
Negotiable |
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MUBW10-06A6 |
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MODULE IGBT CBI E1 |
Data Sheet |
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MUBW10-06A6K |
Ixys |
Discrete Semiconductor Modules NPT IGBT 600V, 10A |
Data Sheet |
Negotiable |
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 |
MUBW10-06A7 |
Ixys |
Discrete Semiconductor Modules 10 Amps 600V |
Data Sheet |
Negotiable |
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MUBW10-12 |
Other |
|
Data Sheet |
Negotiable |
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MUBW10-12A6 |
Other |
|
Data Sheet |
Negotiable |
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