Product Summary

The FF200R12KE3 is an IGBT-Module.

Parametrics

FF200R12KE3 absolute maximum ratings: (1)collector emitter voltage: 1200V; (2)DC collector current: 200A; (3)repetitive peak collector current: 400A; (4)total power dissipation: 1050W; (5)gate emitter peak voltage: ±20V.

Features

FF200R12KE3 features: (1)forward voltage: 1.65V; (2)peak reverse recovery current: 150A; (3)recovered charge: 20μC; (4)reverse recovery energy: 9 mJ; (5)thermal resistance, junction to case: 0.20K/W.

Diagrams

FF200R12KE3 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FF200R12KE3
FF200R12KE3

Infineon Technologies

IGBT Transistors 1200V 200A DUAL

Data Sheet

0-6: $87.41
6-10: $78.67
FF200R12KE3_B2
FF200R12KE3_B2

Infineon Technologies

IGBT Modules N-CH 1.2KV 295A

Data Sheet

0-6: $85.58
6-10: $77.02